Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L 1600 MT/s

4GB DDR3L 1600MT/s Non-ECC, CL11, 1.35V, Unbuffered, SODIMM Module

Key Features

• JEDEC standard 1.35V and 1.5V Power Supply
• VDDQ = 1.35V and 1.5V
• 800MT/s fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB: Height1.18” (30mm), double sided component
• Lead Free RoHS Compliant

Description

Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.

Specifications

Power
Memory voltage	1.35,1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
ECC	No
Internal memory type	DDR3L
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
ECC	No
Internal memory type	DDR3L
Harmonized System (HS) code	84733020
Memory data transfer rate	1600 MT/s
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020