Kingston Technology  |  SKU: KSM32SES8/16MF

Kingston Technology KSM32SES8/16MF memory module 16 GB 1 x 16 GB DDR4 3200 MT/s 260-pin SO-DIMM ECC

€170.93
Shipping calculated at checkout.

Delivery and Shipping

Products shipped within 2 working days from date of order.

Costs

0-24.99kg €14.50

25kg – 50kg €35.00

50kg and Up €60.00

No Customs Charges

Deliveries from Ireland & EU meaning no unwanted customs charges. No hidden charges.

16GB, DDR4, 3200MT/s, ECC, Unbuffered, SODIMM, CL22, 1RX8, 1.2V, 260-pin

Key Features

  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported

Description

Kingston's KSM32SES8/16MF is a 2G x 72-bit (16GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM
uses gold contact fingers.

Specifications

Power
Memory voltage 1.2 V
Design
JEDEC standard Yes
Memory
Buffered memory type Unregistered (unbuffered)
Memory layout (modules x size) 1 x 16 GB
Internal memory 16 GB
Component for Laptop
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 2048M x 72
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
ECC Yes
Internal memory type DDR4
Programming power voltage (VPP) 2.5 V
Features
Buffered memory type Unregistered (unbuffered)
Memory layout (modules x size) 1 x 16 GB
Internal memory 16 GB
Component for Laptop
Memory form factor 260-pin SO-DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 2048M x 72
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
SPD profile Yes
Memory ranking 1
ECC Yes
Internal memory type DDR4
Programming power voltage (VPP) 2.5 V
JEDEC standard Yes
Harmonized System (HS) code 84733020
Memory data transfer rate 3200 MT/s
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Storage temperature (T-T) -55 - 100 °C
Technical details
Doesn't contain Halogen
Compliance certificates RoHS
Sustainability
Doesn't contain Halogen
Compliance certificates RoHS
Weight & dimensions
Width 69.6 mm
Depth 3.7 mm
Height 30 mm
Logistics data
Harmonized System (HS) code 84733020
Other features
Harmonized System (HS) code 84733020
Doesn't contain Halogen

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