Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

MZ-V9S2T0BW

Key Features

• Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
• Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
• Available in different capacities up to 4TB.
• Power efficient design puts less burden on your PC's battery life.
• Smart thermal solution provides consistent and reliable performance.
• Five year limited warranty.

Reasons To Buy

Spectacular speed everyday

Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day

Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.

Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software

Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life

For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance

Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency

Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility

Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Description

Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Specifications

Hard drive
SSD capacity	2 TB
Memory type	V-NAND TLC
Data transmission
Read speed	7250 MB/s
Write speed	6300 MB/s
Random write (4KB)	1350000 IOPS
Random read (4KB)	1000000 IOPS
Security
Security algorithms	256-bit AES
Endurance
Mean time between failures (MTBF)	1500000 h
Features
Interface	PCI Express 4.0
Component for	PC
NVMe	Yes
NVMe version	2.0
DevSlp (device sleep) support	Yes
SSD capacity	2 TB
Security algorithms	256-bit AES
S.M.A.R.T. support	Yes
Read speed	7250 MB/s
TRIM support	Yes
Write speed	6300 MB/s
Memory type	V-NAND TLC
Random write (4KB)	1350000 IOPS
Random read (4KB)	1000000 IOPS
Mean time between failures (MTBF)	1500000 h
Hardware encryption	Yes
SSD form factor	M.2
M.2 SSD size	2280 (22 x 80 mm)
Power
Power consumption DevSlp (device sleep)	5 mW
Power consumption (write)	4.2 W
Power consumption (read)	4.6 W
Power consumption (idle)	0.06 W
Operating voltage	3.3 V
Average power consumption (write)	4.2 W
Average power consumption (read)	4.6 W
Performance
Interface	PCI Express 4.0
Component for	PC
NVMe	Yes
NVMe version	2.0
DevSlp (device sleep) support	Yes
SSD capacity	2 TB
Security algorithms	256-bit AES
S.M.A.R.T. support	Yes
Read speed	7250 MB/s
TRIM support	Yes
Write speed	6300 MB/s
Memory type	V-NAND TLC
Random write (4KB)	1350000 IOPS
Random read (4KB)	1000000 IOPS
Mean time between failures (MTBF)	1500000 h
Hardware encryption	Yes
Design
Component for	PC
SSD form factor	M.2
Weight & dimensions
Width	80.2 mm
Weight	9 g
Height	80.2 mm
Depth	2.38 mm
Package width	139 mm
Package depth	102 mm
Package height	24 mm
Package weight	70 g
Packaging data
Package width	139 mm
Package depth	102 mm
Package height	24 mm
Package weight	70 g
Operational conditions
Operating temperature (T-T)	0 - 70 °C
Operating shock	1500 G
Technical details
Interface	PCI Express 4.0
S.M.A.R.T. support	Yes
Operating temperature (T-T)	0 - 70 °C
TRIM support	Yes
Operating shock	1500 G
Hardware encryption	Yes
SSD form factor	M.2